FABRICATION AND CHARACTERISATION of InGaAs/InGaAsP/InP LONG WAVELENGTH SEMICONDUCTOR LASERS
نویسندگان
چکیده
This paper presents the fabrication and characterisation of wet and reactive ion etched ridge waveguide InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5μm. Characterisation results of InGaAs/InGaAsP/InP lasers are given of two etching methods, namely wet chemical etching and reactive ion etching. Relative advantages and disadvantages of these two methods are also discussed comparatively.
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